| PART |
Description |
Maker |
| SSM6E03TU |
Multi-chip discrete device (P-ch N-ch)
|
TOSHIBA
|
| SSM6H19NU |
Multi-chip discrete device (N-ch SBD)
|
TOSHIBA
|
| AS8S512K32AQ1-25L_Q AS8S512K32P-17L/IT AS8S512K32P |
512K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68
512K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68
512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CQFP68
512K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CPGA66 PGA-66
512K x 32 SRAM SRAM MEMORY ARRAY
|
Micross Components
Austin Semiconductor
|
| TPCF8B0107 |
TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode
|
Toshiba Semiconductor
|
| TPC6D03 |
Multi-Chip Device Silicon PNP Epitaxial Type, Schottky Barrier Diode High-Speed Switching Applications DC-DC Converter Applications
|
TOSHIBA
|
| CYM1841BPZ-20C CYM1841BPZ-45C CYM1841BP7-15C CYM18 |
256K X 32 MULTI DEVICE SRAM MODULE, 35 ns, SMA64 PLASTIC, SIMM-64
256K X 32 MULTI DEVICE SRAM MODULE, 45 ns, SMA64 PLASTIC, SIMM-64
256K X 32 MULTI DEVICE SRAM MODULE, 15 ns, SMA64 PLASTIC, SIMM-64
256K X 32 MULTI DEVICE SRAM MODULE, 25 ns, SMA64 PLASTIC, SIMM-64
256K X 32 MULTI DEVICE SRAM MODULE, 20 ns, SMA72 PLASTIC, SIMM-72
256K x 32 Static RAM Module
|
Cypress Semiconductor, Corp.
|
| AEPDH1M8LB-12 AEPDS1M8LB-85P AEPDH1M8LB-10P AEPDH1 |
1M X 8 MULTI DEVICE DRAM MODULE, 120 ns, SMA28 SIMM-28
1M X 8 MULTI DEVICE DRAM MODULE, 85 ns, SMA28 SIMM-28
1M X 8 MULTI DEVICE DRAM MODULE, 100 ns, SMA28 SIMM-28
|
Fox Electronics
|
| DPS96122-100I DPS96122-85I DPS96122-150I |
256K X 16 MULTI DEVICE SRAM MODULE, 100 ns, DMA68
256K X 16 MULTI DEVICE SRAM MODULE, 85 ns, DMA68
256K X 16 MULTI DEVICE SRAM MODULE, 150 ns, DMA68
|
|
| WS128K32V-35HS WS128K32V-35HC |
512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, HIP66
512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, CPGA66
|
WHITE ELECTRONIC DESIGNS CORP
|
| EMS256K8BMO2-55M EMS256K8BMO2-55D EMS256K8BMO6-55I |
256K X 8 MULTI DEVICE SRAM MODULE, 55 ns, CDMA32
256K X 8 MULTI DEVICE SRAM MODULE, 55 ns, PDMA32
|
OKI SEMICONDUCTOR CO., LTD.
|
| CS201212-5R6K CS201212-4R7K CS201212-R15K CS201212 |
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 5600000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 4700000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 150000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 3300000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 820000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 680000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 180000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 68000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 33000000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns, Inc.
|
|
